BSC059N04LS6ATMA1 vs BSC021N08NS5ATMA1 Vergleich

Detaillierter Direktvergleich von BSC059N04LS6ATMA1 von Infineon und BSC021N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Aktiv
Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter BSC059N04LS6ATMA1 BSC021N08NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,81
Technology OptiMOS 6 (N-channel MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
Betriebstemperaturbereich -55C to +150C —
Gehäuse PG-TDSON-8-6 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3)
Montageart Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
RoHS-Status Compliant Compliant (Pb-free)
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSC021N08NS5ATMA1
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tc=25°C) — 226 A
Continuous Drain Current (I_D, Tc=100°C) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) — 2.1 mΩ
Gate-Source Voltage V_GS max — ±20 V
Power Dissipation P_D (Tc=25°C) — 214 W
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
Total Gate Charge Q_G typ — [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max — [DATA_NEEDED: R_thJC]
MSL-Level — MSL 1 (per JEDEC J-STD-020)
Avalanche Energy Rated — Yes (single-pulse)
Delivery Form — Tape & Reel (T&R)

Datenblätter & Ressourcen

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