BSC059N04LS6ATMA1 vs BSC021N08NS5ATMA1 비교
다음의 상세 나란히 비교: BSC059N04LS6ATMA1 제조: Infineon 및 BSC021N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC059N04LS6ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $0.81 |
| Technology | OptiMOS 6 (N-channel MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| 동작 온도 범위 | -55C to +150C | — |
| 패키지 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| RoHS 상태 | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| 동작 접합 온도 | — | -55 °C to +175 °C |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| MSL 레벨 | — | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |