BSC066N06NSATMA1 vs BSC016N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC066N06NSATMA1 von Infineon und BSC016N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC066N06NSATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,65 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | 26 nC (typ) | 71 nC |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Gehäuse | PG-TDSON-8-6 (TDSON EP) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | OptiMOS™ 5 |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |
| Gate Drive (recommended) | — | 10 V |