BSC077N12NS3GATMA1 vs BSC036NE7NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC077N12NS3GATMA1 von Infineon und BSC036NE7NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktivInfineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC077N12NS3GATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Transistortyp | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 400 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| MSL-Level | 1 | 1 |
| RoHS-Status | Compliant | ROHS3 Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |
| Betriebstemperaturbereich | — | -55C to +175C |