BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
Teilenummer: BSC036NE7NS3GATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.1 | $21,00 |
| 100 | $1.62 | $162,00 |
| 500 | $1.28 | $640,00 |
| 1.000 | $1.05 | $1.050,00 |
| 3.000 | $0.82 | $2.460,00 |
BSC036NE7NS3GATMA1 Übersicht
An N-channel MOSFET is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage above the threshold (typically 1-3 V) creates an inversion-layer conduction channel between drain and source. Within the broader component taxonomy, a power MOSFET belongs to the discrete semiconductor > transistor > MOSFET family, used as the primary switching element in power conversion stages such as synchronous buck converters, motor drives, and hot-swap controllers. Infineon's OptiMOS 3 technology targets high-frequency, high-current density applications where low conduction and switching losses are critical.
Key features include a low on-state resistance of 3.6 mOhm max at 10 V VGS, fast switching for high-frequency converters up to 1 MHz, an integrated gate-source protection Zener (ESD protection), and an exposed pad (EP) for direct PCB thermal coupling. The PG-TDSON-8-7 outline keeps the source current path symmetrical and minimizes package parasitic inductance, enabling clean switching edges in multi-MHz power stages.
The 31 C/W junction-to-case thermal resistance supports high continuous current loading, while the small 5x6 mm footprint allows 30 A/inch^2 power stage density. OptiMOS 3 also reduces gate charge (Qg typ ~ 45 nC) which directly lowers switching losses in hard-switched topologies. For server and telecom 48 V input stages, automotive 24 V buck converters, and high-current load switches, this part provides an industry-standard figure of merit (FOM = Rds(on) x Qg).
Typical applications include synchronous rectification in 48 V server / telecom intermediate bus converters, solar inverter power stages, motor drive half-bridges, hot-swap and OR-ing controllers, and battery management protection MOSFETs for 12 V/24 V/48 V systems. The wide 75 V VDS rating provides adequate derating margin below the standard 48 V bus.
Design trade-off to remember: at high VIN the low Rds(on) is partially offset by switching losses; drive the gate with a 4.5-10 V driver to stay in full enhancement. Below 4.5 V VGS the device moves into the linear region, dissipating large power at high current.
Drop-in-Alternativen für BSC036NE7NS3GATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSC036NE7NS3GATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Tc.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSC042NE7NS3GATMA1
✅ Drop-In✓ Auf Lager
$1.24 / Stück
Datenblatt ansehen →BSC077N12NS3GATMA1
✅ Drop-In✓ Auf Lager
$0.71 / Stück
Datenblatt ansehen →BSC093N15NS5ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.83 / Stück
Datenblatt ansehen →BSC120N03LSGATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.36 / Stück
Datenblatt ansehen →BSC0902NSATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.78 / Stück
Datenblatt ansehen →NTMFS036N75M5L
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSC036NE7NS3GATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Pulsed Drain Current (IDM) | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC |
| Rise Time (tr typ) | 13 ns |
| Fall Time (tf typ) | 11 ns |
| Power Dissipation (PD max, Tc=25C) | 156 W |
| Power Dissipation (Ta=25C) | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W |
| Betriebstemperaturbereich | -55C to +175C |
| Gehäuse | PG-TDSON-8-7 (5x6 mm) |
| Montageart | Surface Mount |
| RoHS-Status | ROHS3 Compliant |
| MSL-Level | 1 |
BSC036NE7NS3GATMA1 Pin-Konfiguration
| Pin 1 | G — Gate - gate drive input, VGS drive range 4.5V to 20V |
| Pin 2 | S — Source - power source terminal |
| Pin 3 | S — Source - power source terminal |
| Pin 4 | D — Drain - power drain terminal |
| Pin 5 | D — Drain - power drain terminal |
| Pin 6 | D — Drain - power drain terminal |
| Pin 7 | D — Drain - power drain terminal |
| Pin 8 | S — Source - power source terminal (also tied to exposed pad) |
| Pin EP | Thermal Pad — Exposed pad - thermal dissipation, electrically tied to Source (pin 8) |
Sicherer Arbeitsbereich - BSC036NE7NS3GATMA1
Typische Anwendungen
BSC036NE7NS3GATMA1 ist geeignet für 7 Anwendungs: 48V Telecom/Server Synchronous Buck Converter, 24V/48V Battery Management Protection MOSFET, Solar Inverter Power Stage, Motor Drive Half-Bridge (24V-48V BLDC/PMSM), Hot-Swap / OR-ing Controller Switch, Automotive 12V/24V Load Switch, Industrial SMPS Primary-Side Switch.
48V Telecom/Server Synchronous Buck Converter
The BSC036NE7NS3GATMA1's 3.6 mOhm RDS(on) and 75 V VDS rating make it ideal as the synchronous (low-side) FET in 48 V-to-PoL buck converter stages for telecom and hyperscale servers. At 30 A continuous load, conduction loss is only 3.2 W per switch, keeping multi-phase 48 V designs thermally manageable. With Qg of 45 nC, the device supports 500 kHz to 1 MHz switching, enabling high power density in small 1U server form factors. Place it on the same PG-TDSON-8-7 footprint as the high-side control FET (e.g. BSC100N10NSFGATMA1) to minimize the power loop and switching overshoot. The exposed pad must be soldered to a copper pour of at least 100 mm^2 for proper thermal dissipation.
Empfohlen
24V/48V Battery Management Protection MOSFET
BSC036NE7NS3GATMA1 serves as a low-side protection FET in lithium-ion battery management systems for e-mobility, energy storage, and 48 V mild-hybrid automotive applications. The 75 V breakdown comfortably exceeds 48 V battery stack maximums while the 3.6 mOhm RDS(on) keeps voltage drop and heat low at 50-100 A continuous discharge. The 0.8 C/W RthJC supports direct PCB copper cooling without an external heatsink in space-constrained pack designs. Gate-source Zener protection enables robust hot-plug behavior during pack connector mating. For e-bike, solar battery, and industrial lithium battery packs, this part provides industrial-grade reliability from -55C to +175C junction temperature range.
Empfohlen
Solar Inverter Power Stage
In string inverter and microinverter power stages, BSC036NE7NS3GATMA1 handles up to 100 A peak current for the DC-AC conversion of solar panel input (typically 25-60 V string voltage). The 75 V VDS gives 25% derating margin above 60 V maximum input, while the 3.6 mOhm RDS(on) keeps full-load efficiency above 97% in residential inverter applications. Its fast 13 ns rise / 11 ns fall times enable 50-100 kHz switching with minimal switching loss, allowing smaller magnetics and lower BOM cost. The PG-TDSON-8-7 surface-mount package suits automated assembly for high-volume inverter production. Pair with a 100 V or 120 V part for >60 V DC-input applications.
Empfohlen
Motor Drive Half-Bridge (24V-48V BLDC/PMSM)
BSC036NE7NS3GATMA1 functions as one of the three half-bridge low-side switches in a 3-phase BLDC or PMSM motor drive for industrial automation, e-bikes, drones, and small EVs. The 100 A continuous rating supports motor currents up to 30 A peak per phase with 3x overshoot headroom for transients. The 3.6 mOhm RDS(on) and small PG-TDSON-8-7 footprint allow high power density on multi-axis motor control PCBs. The 45 nC total gate charge enables 25-50 kHz PWM frequencies for low-torque-ripple sinusoidal commutation. Industrial factory automation systems commonly deploy this MOSFET in conveyor, pump, and small-robot motor drives.
Empfohlen
Hot-Swap / OR-ing Controller Switch
BSC036NE7NS3GATMA1 acts as the series pass element in -48 V telecom hot-swap controllers and redundant power supply OR-ing circuits. The 75 V VDS provides safe operating margin over -48 V nominal plus transient spikes, while the 3.6 mOhm RDS(on) minimizes voltage drop and dissipation under 30-50 A continuous load. The 100 A peak current capacity absorbs inrush transients during PCB insertion events. For server, datacenter, and network switch redundant power architectures, this part provides reliable disconnect and reverse-current blocking when paired with a hot-swap controller IC. Surface-mount PG-TDSON-8-7 enables compact blade-server power entry designs.
Empfohlen
Automotive 12V/24V Load Switch
In automotive body electronics and 24 V truck/bus systems, BSC036NE7NS3GATMA1 operates as a high-current load switch for headlamp modules, seat heaters, electric power steering, and DC-DC converters. The 75 V VDS comfortably covers 24 V jump-start and load-dump transients up to 35 V. The PG-TDSON-8-7 package handles 100 A continuous current and 156 W power dissipation when properly heatsunk. The robust -55C to +175C junction range suits under-hood thermal stress. While not AEC-Q101 qualified by default, it is widely used in non-safety automotive body and chassis systems. For safety-critical ADAS applications, use AEC-Q100/AEC-Q101 qualified equivalents.
Empfohlen
Industrial SMPS Primary-Side Switch
BSC036NE7NS3GATMA1 is suitable as the primary-side switch in 24 V/48 V industrial SMPS and DIN-rail power supplies up to 500 W. With 75 V VDS rating and 100 A continuous current, it handles 36-60 V DC-input telecom and industrial bus voltages with adequate derating. The 3.6 mOhm RDS(on) and 45 nC Qg support 100-200 kHz hard-switched topologies for compact 1U power bricks. The PG-TDSON-8-7 package with exposed thermal pad dissipates 156 W directly to the chassis or heatsink. Used widely in industrial PLC power supplies, building automation controllers, and factory automation PSUs operating from 24 V or 48 V DC bus.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSC036NE7NS3GATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSC042NE7NS3GATMA1 | BSC077N12NS3GATMA1 | BSC093N15NS5ATMA1 | NTMFS036N75M5L |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | SO-8FL / DFN-8 (5x6 mm) - same outline |
| VDS Max | 75 V | 75 V | 120 V | 150 V | 75 V |
| RDS(on) Max @ VGS=10V | 3.6 mOhm | 4.2 mOhm | 7.7 mOhm | 9.3 mOhm | 3.6 mOhm |
| Continuous Drain Current (Tc=25C) | 100 A | 94 A | 78 A | 75 A | 100 A |
| Total Gate Charge (Qg typ) | 45 nC | 42 nC | 75 nC | 85 nC | 48 nC |
| Power Dissipation (PD max) | 156 W | 156 W | 156 W | 156 W | 100 W |
| Thermal Resistance RthJC | 0.8 C/W | 0.8 C/W | 0.8 C/W | 0.8 C/W | 1.5 C/W |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | onsemi PowerTrench |
| Unit Price @ 1000 pcs (USD, as of 2026-09-14) | 1.05 | 0.95 | 1.85 | 2.20 | 1.10 |
Wichtigste Unterscheidungsmerkmale
- Lowest RDS(on) at 75 V VDS in PG-TDSON-8-7 OptiMOS family (vs. BSC042NE7NS3GATMA1)
- Higher VDS rating than 60V-class parts with similar RDS(on) (vs. BSC0902NSATMA1)
- OptiMOS 3 generation - mature technology with broad second-source availability (vs. BSC093N15NS5ATMA1 (OptiMOS 5))
Designhinweise
At 50 A continuous drain current and 3.6 mOhm RDS(on), conduction loss is P = I^2 * R = 50^2 * 0.0036 = 9 W. With RthJC = 0.8 C/W, junction temperature rises 9 * 0.8 = 7.2 C above case temperature. The PG-TDSON-8-7 exposed pad must be soldered to at least 100 mm^2 of copper pour (top + bottom layer stitching with thermal vias) to achieve the rated 156 W power dissipation. For continuous high-current operation above 30 A, attach a heatsink or fan-cooled cold plate. Estimated: junction rise is for steady-state conduction loss only; switching loss at 500 kHz adds approximately 1-2 W per FET.
Route the high-current drain and source traces on top and bottom layers with minimum 10 mm width (for 50 A with 1 oz copper) to minimize conduction loss. Use a tight switching loop with the gate drive return (source connection) less than 5 mm long to minimize parasitic inductance and ringing. Stitch the exposed thermal pad with an array of 0.3 mm thermal vias on 1.0 mm pitch down to an inner copper plane for heat spreading. Keep high dv/dt switching nodes away from sensitive analog feedback traces to avoid capacitive coupling. Place input bulk capacitors within 5 mm of the FET source terminal.
The PG-TDSON-8-7 source pins (2, 3, 8) are internally connected to the exposed pad. Use all source pins and the exposed pad together for maximum current handling and thermal performance. Do not split source connections between the gate driver ground (Kelvin connection) and the power return - use a small gate-drive pull-down resistor at the gate IC output to keep high di/dt current out of the gate driver ground path. Avoid long gate traces - gate resistance above 5 ohm will slow switching and increase switching loss. Estimated: each 10 mm of gate trace adds approximately 1 nH of parasitic inductance.
Common pitfalls: (1) Driving the gate below 4.5 V VGS pushes the FET into the linear region, causing severe dissipation; always verify VGS at full load with worst-case driver output. (2) Exceeding 75 V VDS, including inductive ringing, causes avalanche failure - add a snubber or TVS clamp if reverse recovery or stray inductance generates overshoot. (3) Operating above 175 C junction temperature causes long-term reliability degradation - measure Tj under worst-case conditions. (4) The body diode is suitable for synchronous rectification but not for continuous forward conduction above 30 A - use an external Schottky diode for hard-switched bridge applications.
To minimize EMI from high di/dt switching edges, add an RC snubber (10 ohm + 1 nF typical) across the drain-source to slow the switching edge to 5-10 ns. Use a ferrite bead or common-mode choke on the input/output DC rails. The PG-TDSON-8-7 package has lower parasitic inductance than TO-220 or DPAK alternatives, but at 100 A peak current, ringing at 50-200 MHz can still exceed CISPR 22 Class B limits. Measure with a near-field probe and adjust gate resistance to trade off switching loss against EMI margin.
Compliance-Informationen
ROHS3 Compliant per Infineon product page and ics-100.com listing. Not AEC-Q100 qualified by default - for automotive safety-critical applications select AEC-Q100/AEC-Q101 qualified equivalents. Pb-free reflow profile per JEDEC J-STD-020.
