BSC093N15NS5 vs BSC093N15NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC093N15NS5 von Infineon und BSC093N15NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC093N15NS5 | BSC093N15NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $1,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC093N15NS5 | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 150V |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 87 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.3 mOhm | — |
| Power Dissipation (Tc) | 139 W | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | [DATA_NEEDED: total gate charge Qg] |
| RoHS-Status | Compliant | Compliant |
| AEC-Q100 Automotive Qualified | Not qualified (standard grade) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Halogenfrei | — | [DATA_NEEDED: halogen free status] |