BSC097N06NSATMA1 vs BSC360N15NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC097N06NSATMA1 von Infineon und BSC360N15NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC097N06NSATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse / Bauform | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | 1 |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Part Number | — | BSC360N15NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Power Dissipation (PD) at Tc | — | 74 W |
| Gate Threshold Voltage (VGS th) typ | — | 3.0 V |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Gehäuse | — | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| Betriebstemperaturbereich | — | -55°C to +150°C (junction) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |