BSC097N06NSATMA1 vs BSC360N15NS3GATMA1 对比
详细并排对比 BSC097N06NSATMA1 出自 Infineon 和 BSC360N15NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC097N06NSATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 / 外壳 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (Unlimited) | 1 |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Part Number | — | BSC360N15NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Power Dissipation (PD) at Tc | — | 74 W |
| Gate Threshold Voltage (VGS th) typ | — | 3.0 V |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| 封装 | — | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| 工作温度范围 | — | -55°C to +150°C (junction) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |