BSC097N06NSATMA1 vs IAUZ30N10S5L240ATMA1 Vergleich
Detaillierter Direktvergleich von BSC097N06NSATMA1 von Infineon und IAUZ30N10S5L240ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC097N06NSATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,86 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse / Bauform | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (trench) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | — |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| Gehäuse | — | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Betriebstemperaturbereich | — | -55°C to +175°C (junction, automotive grade) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |