BSC097N06NSATMA1 vs IAUZ30N10S5L240ATMA1 Comparación
Comparación detallada lado a lado de BSC097N06NSATMA1 por Infineon y IAUZ30N10S5L240ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC097N06NSATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,86 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado / Carcasa | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (trench) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (Unlimited) | — |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| Encapsulado | — | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (junction, automotive grade) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |