BSC097N06NSATMA1 vs IPL60R105P7AUMA1 Vergleich
Detaillierter Direktvergleich von BSC097N06NSATMA1 von Infineon und IPL60R105P7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC097N06NSATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | CoolMOS P7 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse / Bauform | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | Superjunction (SJ) N-Channel Power MOSFET |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Betriebstemperaturbereich | — | -55C to +150C |
| Gehäuse | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | — | N-Channel |
| Halogenfrei | — | Yes |
| Lead-Free | — | Yes |