BSC097N06NSATMA1 vs IPL60R105P7AUMA1 Comparación
Comparación detallada lado a lado de BSC097N06NSATMA1 por Infineon y IPL60R105P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC097N06NSATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | CoolMOS P7 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado / Carcasa | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | Superjunction (SJ) N-Channel Power MOSFET |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Encapsulado | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | — | N-Channel |
| Sin halógenos | — | Yes |
| Lead-Free | — | Yes |