BSC340N08NS3GATMA1 vs BSC12DN20NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC340N08NS3GATMA1 von Infineon und BSC12DN20NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC340N08NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,81 | $0,61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 200 V |
| Continuous Drain Current (ID, Tc) | 23 A | 11.3 A |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Product Family | — | OptiMOS 200V |
| Transistortyp | — | N-Channel MOSFET |
| Power Dissipation (PD, Tc) | — | 50 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| RoHS-Status | — | Compliant |
| Configuration | — | Single N-channel |
| Pin-Anzahl | — | 8 |