BSC340N08NS3GATMA1 vs BSC12DN20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC340N08NS3GATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC340N08NS3GATMA1
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveInfineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC340N08NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | β |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 200 V |
| Continuous Drain Current (ID, Tc) | 23 A | 11.3 A |
| Continuous Drain Current (ID, Ta) | 7 A | β |
| Pulsed Drain Current (IDM) | 92 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage VGS max | +/- 20 V | β |
| Power Dissipation (Tc) | 32 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | β |
| Channel Type | Single N-Channel | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| Product Family | β | OptiMOS 200V |
| Transistor Type | β | N-Channel MOSFET |
| Power Dissipation (PD, Tc) | β | 50 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| RoHS Status | β | Compliant |
| Configuration | β | Single N-channel |
| Pin Count | β | 8 |