BSD214SNH6327XTSA1 vs BSS192PH6327FTSA1 Vergleich

Detaillierter Direktvergleich von BSD214SNH6327XTSA1 von Infineon und BSS192PH6327FTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSD214SNH6327XTSA1 BSS192PH6327FTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,27 $0,34
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 20 V 250 V
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Gehäuse SOT-363 (PG-SOT363-PO), 6-pin PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +150C (junction) [DATA_NEEDED: Tj max / operating temp]
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Lead Plating Pb-free —
RoHS-Status Compliant [DATA_NEEDED: explicit RoHS status from datasheet]
MSL-Level 1 —
Standard Pack Quantity 3000 (Tape & Reel) —
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

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