BSG0813NDIATMA1 vs BSC019N04LSTATMA1 Vergleich
Detaillierter Direktvergleich von BSG0813NDIATMA1 von Infineon und BSC019N04LSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSG0813NDIATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $1,21 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 Power Block | — |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | — |
| Configuration | High-side + Low-side, integrated | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Low-Side Continuous Drain Current (ID) | 19 A | — |
| High-Side Continuous Drain Current (ID) | 33 A | — |
| Power Dissipation (PD) | 2.5 W | — |
| Gehäuse | PG-TISON-8 (5.0 x 6.0 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | — |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology Generation | OptiMOS 5 | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Topologie | Synchronous buck half-bridge | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |