BSG0813NDIATMA1 vs BSC019N04LSTATMA1 对比
详细并排对比 BSG0813NDIATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSG0813NDIATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $1.21 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 Power Block | — |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | — |
| Configuration | High-side + Low-side, integrated | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Low-Side Continuous Drain Current (ID) | 19 A | — |
| High-Side Continuous Drain Current (ID) | 33 A | — |
| Power Dissipation (PD) | 2.5 W | — |
| 封装 | PG-TISON-8 (5.0 x 6.0 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | — |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology Generation | OptiMOS 5 | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| 拓扑 | Synchronous buck half-bridge | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |