BSG0813NDIATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of BSG0813NDIATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSG0813NDIATMA1
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
BSG0813NDIATMA1 β ActiveInfineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | BSG0813NDIATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.21 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 Power Block | β |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | β |
| Configuration | High-side + Low-side, integrated | β |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Low-Side Continuous Drain Current (ID) | 19 A | β |
| High-Side Continuous Drain Current (ID) | 33 A | β |
| Power Dissipation (PD) | 2.5 W | β |
| Package | PG-TISON-8 (5.0 x 6.0 mm) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | β |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology Generation | OptiMOS 5 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Topology | Synchronous buck half-bridge | β |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | β | 161 A |
| Continuous Drain Current (ID, Ta=25C) | β | 28 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V |
| Total Gate Charge Qg typ | β | 85 nC |
| Power Dissipation PD (Tc=25C) | β | 94 W |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | Yes |