BSG0813NDIATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of BSG0813NDIATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSG0813NDIATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series OptiMOS 5 Power Block —
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck) —
Configuration High-side + Low-side, integrated —
Drain-Source Voltage (VDS) 25 V 40 V
Low-Side Continuous Drain Current (ID) 19 A —
High-Side Continuous Drain Current (ID) 33 A —
Power Dissipation (PD) 2.5 W —
Package PG-TISON-8 (5.0 x 6.0 mm) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 C to +150 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
RDS(on) - Low-Side [DATA_NEEDED: RDS(on) low-side @ VGS] —
RDS(on) - High-Side [DATA_NEEDED: RDS(on) high-side @ VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology Generation OptiMOS 5 —
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
Topology Synchronous buck half-bridge —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Datasheets & Resources

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