BSL308PEH6327XTSA1 vs BSP315PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL308PEH6327XTSA1 von Infineon und BSP315PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSL308PEH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,31 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | 2x P-Channel (Dual) | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | -1.17 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 1.8 W (Ta) |
| Gehäuse | PG-TSOP6-6 (TSOT-23-6) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Configuration | Dual, common source | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +150 C (TJ) | — |
| Automotive Qualification | AEC-Q101 | — |
| Anzahl der Pins | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| RoHS-Status | Compliant | — |
| Technology | — | OptiMOS (enhancement mode) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |