BSO150N03MDGXUMA1 vs BSC120N03LSGATMA1 Vergleich
Detaillierter Direktvergleich von BSO150N03MDGXUMA1 von Infineon und BSC120N03LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ AktivInfineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSO150N03MDGXUMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,37 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C (TJ) |
| Gehäuse | PG-DSO-8 (SO-8 with exposed pad) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |