BSO150N03MDGXUMA1 vs BSC120N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSO150N03MDGXUMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveInfineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSO150N03MDGXUMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | β |
| Product Type | Dual N-Channel MOSFET Array | β |
| Technology | OptiMOS 3M (30V trench MOSFET) | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) max per channel | 9.3 A | β |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | β |
| Gate-Source Voltage (VGS) max | 20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | β |
| Power Dissipation (PD) max | 1.4 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (TJ) |
| Package | PG-DSO-8 (SO-8 with exposed pad) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | β |
| Product Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 12 A |
| Continuous Drain Current (ID) at Tc=25C | β | 39 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | β | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 28 W |