BSO150N03MDGXUMA1 vs BSC120N03LSGATMA1 比較
詳細な並列比較: BSO150N03MDGXUMA1 メーカー: Infineon および BSC120N03LSGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ 生産中
仕様比較
| パラメータ | BSO150N03MDGXUMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.37 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| 動作温度範囲 | -55C to +150C | -55C to +150C (TJ) |
| パッケージ | PG-DSO-8 (SO-8 with exposed pad) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |