BSO150N03MDGXUMA1 vs BSO613SPVGXUMA1 Vergleich
Detaillierter Direktvergleich von BSO150N03MDGXUMA1 von Infineon und BSO613SPVGXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSO150N03MDGXUMA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,37 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS max +/-V] |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Gehäuse | PG-DSO-8 (SO-8 with exposed pad) | PG-DSO-8-6 (Power-SO-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| RoHS-Status | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| Pin-Anzahl | — | 8 (6 active, 2 thermal/NC) |