BSO150N03MDGXUMA1 vs BSO613SPVGXUMA1 Comparación
Comparación detallada lado a lado de BSO150N03MDGXUMA1 por Infineon y BSO613SPVGXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSO150N03MDGXUMA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,37 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS max +/-V] |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Encapsulado | PG-DSO-8 (SO-8 with exposed pad) | PG-DSO-8-6 (Power-SO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Estado RoHS | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| Recuento de pines | — | 8 (6 active, 2 thermal/NC) |