BSP125H6327XTSA1 vs BSR316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP125H6327XTSA1 von Infineon und BSR316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 600 V | -100 V |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 + tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | 1 |
| Qualification | Automotive / Industrial grade | Automotive |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| Polarity | — | P-Channel |