BSP125H6327XTSA1 vs BSS214NWH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP125H6327XTSA1 von Infineon und BSS214NWH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT323 (SOT-323-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | — |
| Qualification | Automotive / Industrial grade | AEC-Q101 (Automotive) |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Lead-Free | — | Yes |