BSP125H6327XTSA1 vs BSS214NWH6327XTSA1 对比
详细并排对比 BSP125H6327XTSA1 出自 Infineon 和 BSS214NWH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| 封装 | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT323 (SOT-323-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (Unlimited) | — |
| Qualification | Automotive / Industrial grade | AEC-Q101 (Automotive) |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Lead-Free | — | Yes |