BSP125H6327XTSA1 vs BSS214NWH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6327XTSA1 by Infineon and BSS214NWH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSS214NWH6327XTSA1 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | SIPMOS (Small Signal Power MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) | 120 mA (Ta) | β |
| Power Dissipation (PD) | 1.8 W (Ta) | β |
| Package | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT323 (SOT-323-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Configuration | Single | β |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | β |
| Qualification | Automotive / Industrial grade | AEC-Q101 (Automotive) |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 20 V |
| Continuous Drain Current (Id) @ 25C | β | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | β | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | β | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | β | 500 mW |
| Lead-Free | β | Yes |