BSP135H6327XTSA1 vs BSP129H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6327XTSA1 von Infineon und BSP129H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSP135H6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,30 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | 4.2 ohm (some sources 6 ohm) |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max rating] |
| Operating Mode | Normally ON (depletion) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223, 3+Tab) |
| Montageart | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Betriebstemperatur | — | -55 C to +150 C (junction) |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |