BSP135H6327XTSA1 vs BSP129H6906XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6327XTSA1 von Infineon und BSP129H6906XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| Gehäuse | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| Montageart | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | — | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | — | [DATA_NEEDED: VGS(off) typical value] |
| Anzahl der Pins | — | 3 functional + 1 tab (4 leads) |
| ESD Protection | — | Integrated Zener diodes on gate |