BSP135H6327XTSA1 vs BSP129H6906XTSA1 Comparación
Comparación detallada lado a lado de BSP135H6327XTSA1 por Infineon y BSP129H6906XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,43 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| Encapsulado | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | — | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | — | [DATA_NEEDED: VGS(off) typical value] |
| Número de pines | — | 3 functional + 1 tab (4 leads) |
| ESD Protection | — | Integrated Zener diodes on gate |