BSP135H6327XTSA1 vs BSP135H6906XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6327XTSA1 von Infineon und BSP135H6906XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223, 3+tab) |
| Montageart | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | SIPMOS (planar high-voltage) |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | -55C to +150C |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (unlimited) |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at TA=25C | — | 120 mA |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Pin-Anzahl | — | 4 (3 leads + drain tab) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |