BSP135H6327XTSA1 vs BSP135H6906XTSA1 Comparison
Detailed side-by-side comparison of BSP135H6327XTSA1 by Infineon and BSP135H6906XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP135H6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSP135H6327XTSA1 | β |
| FET Type | N-Channel, Depletion Mode | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) | 120 mA | β |
| Power Dissipation (PD) | 1.8 W | β |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | β |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Operating Mode | Normally ON (depletion) | β |
| Package | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223, 3+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | SIPMOS (planar high-voltage) |
| Operating Temperature Range | -55C to +150C (junction, typical) | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited) |
| Drain-Source Voltage (VDS) Max | β | 600 V |
| Continuous Drain Current (ID) at TA=25C | β | 120 mA |
| RDS(on) Max at VGS=0V | β | 45 Ohm |
| Power Dissipation (PD) Max | β | 1.8 W |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | β | Depletion mode (normally-on) |
| Pin Count | β | 4 (3 leads + drain tab) |
| Automotive Qualification | β | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | β | Yes |