BSP135H6327XTSA1 vs BSP92PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6327XTSA1 von Infineon und BSP92PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 600 V | -250 V |
| Continuous Drain Current (ID) | 120 mA | -260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W | 1.8 W (Ta) |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | 1 (unlimited) |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| Transistortyp | — | P-Channel Enhancement Mode MOSFET |
| Channel Polarity | — | P-Channel |
| Betriebstemperatur | — | -55C to +150C (Tj) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Pin-Anzahl | — | 4 (Gate, Drain, Drain, Source) |