BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
Teilenummer: BSP92PH6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.42 | $42,00 |
| 500 | $0.36 | $180,00 |
| 1.000 | $0.31 | $310,00 |
BSP92PH6327XTSA1 Übersicht
A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. It sits in the broader hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor -> active electronic component. P-channel devices are commonly used for high-side load switching because their source sits at the load supply rail, allowing the gate to be driven relative to ground with a simple logic-level signal and no bootstrap circuit.
Key specifications include a gate threshold voltage typically in the -1 V to -2.5 V range, very low gate charge suitable for direct microcontroller GPIO drive, and an avalanche-rated single-pulse body diode. The SOT-223-4 package provides a tab that acts as an additional drain thermal pad (with the exposed lead tied to the drain), reducing thermal resistance versus the smaller SOT-23 footprint. This makes the part usable in applications that would overheat a SOT-23 P-MOSFET of similar on-resistance.
Architecturally, the device uses Infineon's planar OptiMOS cell technology optimized for low-voltage gate drive and high drain blocking voltage in the same die. Compared with N-channel counterparts, the trade-off is higher on-state resistance (RDS(on)) per unit silicon area, but the benefit is simplified high-side load switching without charge pumps or level shifters.
Typical applications include 48 V telecom and industrial bus high-side switches, power-rail OR-ing, battery protection in portable and e-mobility systems, motor and solenoid driver low-side complements, and general-purpose DC load management in industrial controls.
When designing, confirm the tab/drain thermal pad is soldered to a sufficient copper pour; with 1.8 W rating this part requires more board copper than a SOT-23 equivalent to stay within thermal limits at full continuous current.
This page synthesizes distributor pricing for the Infineon BSP92PH6327XTSA1, sourced drop-in alternatives, and practical PCB/thermal design notes that complement the manufacturer datasheet.
Drop-in-Alternativen für BSP92PH6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSP92PH6327XTSA1 (gleiche Bauform und Footprint) – abweichend in Package, Drain-Source Voltage (VDS), FET Type, Operating Temperature Range, Continuous Drain Current (ID).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSP92PH6327
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSP88H6327XTSA1
✅ Drop-In✓ Auf Lager
$0.21 / Stück
Datenblatt ansehen →BSP135H6327XTSA1
✅ Drop-In✓ Auf Lager
$0.43 / Stück
Datenblatt ansehen →BSS87H6327FTSA1
✅ Drop-In✓ Auf Lager
$0.18 / Stück
Datenblatt ansehen →BSL308CH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.21 / Stück
Datenblatt ansehen →BSD214SNH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.27 / Stück
Datenblatt ansehen →BSP92PH6327XTSA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET |
| Transistortyp | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | -250 V |
| Continuous Drain Current (ID) | -260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) |
| Gehäuse | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount |
| Channel Polarity | P-Channel |
| Betriebstemperatur | -55C to +150C (Tj) |
| Lead-Free / RoHS | Yes / Compliant |
| MSL-Level | 1 (unlimited) |
| Pin-Anzahl | 4 (Gate, Drain, Drain, Source) |
BSP92PH6327XTSA1 Pin-Konfiguration
| Pin 1 | Gate — Gate input; drive below source to turn on P-channel |
| Pin 2 | Drain — Drain connection; load return path |
| Pin 3 | Drain — Drain connection (tied to exposed tab); main current path |
| Pin 4 | Source — Source connection; typically tied to high-side supply rail |
Sicherer Arbeitsbereich (DC, Ta=25C)
Typische Anwendungen
BSP92PH6327XTSA1 ist geeignet für 7 Anwendungs: 48 V Telecom High-Side Load Switch, Industrial 24-100 V Bus Switch, Battery Protection and High-Side Disconnect, Automotive 12 V / 24 V Load Driver, Power Supply OR-ing and Load Sharing, Solenoid and Relay Driver (Low-Side Complement), Display Backlight and LED String Enable Switch.
48 V Telecom High-Side Load Switch
The BSP92PH6327XTSA1's -250 V VDS rating and P-channel topology make it ideal as a high-side load switch on 48 V telecom rails where transient spikes from hot-plug events or ringing can exceed 100 V. The P-channel source connects to the 48 V rail, and an MCU GPIO pulls the gate to ground to enable the load - eliminating the bootstrap or charge-pump circuitry an N-channel high-side switch would require. With -260 mA continuous current, the device handles line-card feed switches, fan power gating, and distribution bus segments.
Empfohlen
Industrial 24-100 V Bus Switch
Industrial PLCs, factory automation I/O modules, and process control boards frequently distribute 24 V or 100 V field power to sensors, actuators, and remote I/O racks. The BSP92PH6327XTSA1 serves as a per-channel high-side disconnect switch in such systems, with -250 V VDS headroom for inductive kickback and ESD transients common on long cable runs. P-channel drive from a 3.3 V or 5 V MCU GPIO keeps the BOM simple compared to N-channel bootstrap solutions, while the SOT-223-4 tab handles continuous 260 mA per channel without overheating.
Empfohlen
Battery Protection and High-Side Disconnect
In 48 V battery packs for e-mobility, telecom backup, or industrial energy storage, the BSP92PH6327XTSA1 acts as the high-side disconnect MOSFET in the battery management system (BMS). Its P-channel orientation places the load on the drain side, so a simple ground-referenced gate signal from the BMS MCU can isolate the pack during fault, sleep, or shipping modes. The -250 V VDS rating tolerates the inductive transients of motor controllers and DC-DC converters downstream, and the 1.8 W dissipation envelope covers continuous battery idle current paths.
Empfohlen
Automotive 12 V / 24 V Load Driver
Although not AEC-Q100 qualified itself, the BSP92PH6327XTSA1 is widely used in non-safety automotive subsystems - infotainment power rails, interior lighting drivers, and body control modules - where 12 V or 24 V loads need to be switched by logic-level MCUs. The -250 V VDS margin easily absorbs load-dump transients up to 100 V seen on 24 V truck electrical systems, and the P-channel high-side drive simplifies harness design. Designers should still derate continuous current to ~150 mA in enclosed automotive environments.
Empfohlen
Power Supply OR-ing and Load Sharing
The BSP92PH6327XTSA1 is well suited for OR-ing two power sources in redundant supply designs - for example, mains and battery feeds in telecom equipment or industrial UPS systems. The P-channel MOSFET acts as a reverse-current blocker: when both sources are active, the higher-voltage source forward-biases its body diode; the MOSFET is then turned on by pulling the gate low so current flows through the channel with much lower loss than the diode alone. The -250 V rating handles any source transients during switchover events.
Empfohlen
Solenoid and Relay Driver (Low-Side Complement)
While the BSP92PH6327XTSA1 is primarily a high-side switch, it pairs effectively with high-current N-channel MOSFETs in H-bridge or half-bridge configurations driving solenoids, relays, and small motors. In such topologies, the P-channel handles the high-side brake or slow-decay function while the N-channel handles the PWM switching. The P-channel's logic-level gate drive from an MCU GPIO avoids bootstrap capacitors on the high side, simplifying the gate-driver IC choice and reducing BOM cost.
Empfohlen
Display Backlight and LED String Enable Switch
Industrial LCD and signage displays use the BSP92PH6327XTSA1 as a high-side enable switch for LED backlight strings powered from 24 V or 48 V rails. The P-channel switch isolates the LED driver IC during standby, eliminating quiescent leakage through the driver and reducing overall display sleep current to single-digit microamps. The -260 mA continuous rating covers strings of 4-8 LEDs at typical drive currents, and the -250 V VDS provides ample headroom for transient ringing on long LED cable assemblies.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSP92PH6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSP92PH6327 | BSP88H6327XTSA1 | BSP135H6327XTSA1 | BSS87H6327FTSA1 | BSL308CH6327XTSA1 |
|---|---|---|---|---|---|---|
| Package | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | -250 V | -250 V | -100 V | -200 V | -240 V | -30 V |
| Power Dissipation (PD) | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W |
| Channel Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology Family | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Wichtigste Unterscheidungsmerkmale
- Highest VDS rating in the SOT-223-4 P-MOSFET class (vs. BSP135H6327XTSA1)
- Higher continuous drain current than BSP135 / BSS87 (vs. BSP135H6327XTSA1 and BSS87H6327FTSA1)
- P-channel high-side simplicity vs N-channel bootstrap (vs. N-channel equivalent at same VDS)
- Identical die and package as BSP92PH6327 bulk version (vs. BSP92PH6327 (no XTSA1 reel suffix))
Designhinweise
Estimated: at continuous ID = 260 mA and RDS(on) ~5 ohm, conduction loss is roughly P = ID^2 x RDS(on) = 0.34 W - well within the 1.8 W package limit. However, the SOT-223-4 tab must be soldered to at least 100 mm^2 of 1 oz copper pour to keep junction temperature rise below 50C at 25C ambient. Without the tab soldered, the die will derate severely and may fail under sustained load.
Place the BSP92PH6327XTSA1 with the tab/drain pin connected to the largest practical copper pour on the top layer. Use thermal vias (6-8 x 0.3 mm) under the tab to inner-layer copper planes for additional heat spreading. For high-side switching, the drain copper area doubles as both the thermal path and the PCB creepage/clearance margin to adjacent signals - keep high-voltage traces at least 1 mm from low-voltage signal traces.
Do not assume the SOT-223-4 tab is grounded - it is internally tied to the drain, which on a high-side P-channel switch sits at the load return, NOT at board ground. Soldering the tab to a ground pour would short the drain. Also: the body diode conducts from source to drain (forward biased when Vd > Vs); ensure this does not create unintended current paths in bidirectional switch topologies.
Gate drive traces should be kept short (<10 mm) and routed away from the drain node to minimize dv/dt coupling that could inadvertently turn the device on. Place a 10 kohm pull-up resistor from gate to source (i.e. gate to the high-side rail) to ensure the MOSFET stays off when the MCU GPIO is in high-impedance state during reset or programming. Add a 100 kohm + 100 nF RC snubber across source-drain if switching inductive loads at high frequency.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive safety applications use AEC-Q100 qualified parts. Lead-free and halogen-free per JEDEC J-STD-020 MSL1 rating.
