BSP135H6906XTSA1 vs BSP316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6906XTSA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6906XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,21 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -680 mA |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (junction) |
| Gehäuse | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (TO-261-4) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (P-channel MOSFET) |
| MSL-Level | 1 (unlimited) | 1 |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Anzahl der Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |