BSP135H6906XTSA1 vs BSP316PH6327XTSA1 Comparación
Comparación detallada lado a lado de BSP135H6906XTSA1 por Infineon y BSP316PH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSP135H6906XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,21 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -680 mA |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55 C to +150 C (junction) |
| Encapsulado | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (TO-261-4) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (P-channel MOSFET) |
| Nivel MSL | 1 (unlimited) | 1 |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Número de pines | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |