BSP295H6327XTSA1 vs BSR315PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP295H6327XTSA1 von Infineon und BSR315PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP295H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,35 | $0,22 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| Gehäuse | PG-SOT223-4 (3 leads + tab) | PG-SC59-3 / SOT-23-3 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55 C to +150 C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | ±20 V (max VGS) |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | — |
| Drain Tab Connection | Pin 4 (tab) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR315PH6327XTSA1 |
| Series | — | OptiMOS P-Channel |
| FET Type | — | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| Pin-Anzahl | — | 3 |
| Packaging | — | Tape & Reel (TR) |
| Automotive Qualified | — | Yes (per Infineon product family marking) |