BSP315PH6327XTSA1 vs BSP135H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP315PH6327XTSA1 von Infineon und BSP135H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP315PH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,43 |
| FET Type | P-Channel | N-Channel, Depletion Mode |
| Technology | OptiMOS (enhancement mode) | SIPMOS (planar DMOS) |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) | -1.17 A (Ta) | 120 mA |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W |
| Gate-Source Voltage (VGS) | ±20 V (max) | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | -55C to +150C (junction, typical) |
| Gehäuse | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP135H6327XTSA1 |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Operating Mode | — | Normally ON (depletion) |
| RoHS-Status | — | Compliant |