BSP315PH6327XTSA1 vs BSP88H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP315PH6327XTSA1 von Infineon und BSP88H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP315PH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,21 |
| FET Type | P-Channel | — |
| Technology | OptiMOS (enhancement mode) | SIPMOS (planar enhancement mode) |
| Drain-Source Voltage (VDS) | -60 V | 240 V |
| Continuous Drain Current (ID) | -1.17 A (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W at Ta=25 C |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | 6 ohm typical at VGS=10 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SOT223-4 (SOT-223-3) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Transistortyp | — | N-Channel MOSFET |
| Configuration | — | Single |
| Betriebstemperatur | — | -55 C to +150 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |