BSP315PH6327XTSA1 vs BSP88H6327XTSA1 Comparación
Comparación detallada lado a lado de BSP315PH6327XTSA1 por Infineon y BSP88H6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSP315PH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,31 | $0,21 |
| FET Type | P-Channel | — |
| Technology | OptiMOS (enhancement mode) | SIPMOS (planar enhancement mode) |
| Drain-Source Voltage (VDS) | -60 V | 240 V |
| Continuous Drain Current (ID) | -1.17 A (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W at Ta=25 C |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | 6 ohm typical at VGS=10 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | — |
| Encapsulado | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SOT223-4 (SOT-223-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Tipo de transistor | — | N-Channel MOSFET |
| Configuration | — | Single |
| Temperatura de funcionamiento | — | -55 C to +150 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |