BSP315PH6327XTSA1 vs BSR802NL6327HTSA1 Vergleich
Detaillierter Direktvergleich von BSP315PH6327XTSA1 von Infineon und BSR802NL6327HTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP315PH6327XTSA1 | BSR802NL6327HTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,15 |
| FET Type | P-Channel | — |
| Technology | OptiMOS (enhancement mode) | OptiMOS 2 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -1.17 A (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SC59-3 (SC-59 / SOT-346) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Qualification | — | Automotive |
| RoHS-Status | — | Compliant |
| Pin-Anzahl | — | 3 |