BSP316PH6327XTSA1 vs BSD214SNH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP316PH6327XTSA1 von Infineon und BSD214SNH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP316PH6327XTSA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,27 |
| FET Type | P-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gehäuse | PG-SOT223-4 (TO-261-4) | SOT-363 (PG-SOT363-PO), 6-pin |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Anzahl der Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | MOSFET (Metal Oxide), OptiMOS |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |