BSP316PH6327XTSA1 vs BSL308PEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP316PH6327XTSA1 von Infineon und BSL308PEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP316PH6327XTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,21 |
| FET Type | P-Channel | 2x P-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gehäuse | PG-SOT223-4 (TO-261-4) | PG-TSOP6-6 (TSOT-23-6) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| Anzahl der Pins | 3 + thermal tab | 6 |
| Channel Mode | Enhancement | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Configuration | — | Dual, common source |
| Betriebstemperatur | — | -55 C to +150 C (TJ) |
| Automotive Qualification | — | AEC-Q101 |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |