BSP316PH6327XTSA1 vs BSL308PEH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSL308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP316PH6327XTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | P-Channel | 2x P-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Package | PG-SOT223-4 (TO-261-4) | PG-TSOP6-6 (TSOT-23-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | — |
| Number of Pins | 3 + thermal tab | 6 |
| Channel Mode | Enhancement | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | — |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Configuration | — | Dual, common source |
| Operating Temperature | — | -55 C to +150 C (TJ) |
| Automotive Qualification | — | AEC-Q101 |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |