BSR315PH6327XTSA1 vs BSR316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSR315PH6327XTSA1 von Infineon und BSR316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSR315PH6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR315PH6327XTSA1 | BSR316PH6327XTSA1 |
| Series | OptiMOS P-Channel | OptiMOS |
| FET Type | P-Channel, Enhancement Mode | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | -60 V | -100 V |
| Continuous Drain Current (ID) | -620 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 800 mOhm @ -620 mA, -10 V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max VGS) | — |
| Input Capacitance (Ciss) | 176 pF @ 25 V | — |
| Total Gate Charge (Qg) | 6 nC @ 10 V | — |
| Betriebstemperaturbereich | -55 C to +150 C (TJ) | -55 C to +150 C (junction) |
| Gehäuse | PG-SC59-3 / SOT-23-3 | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| Packaging | Tape & Reel (TR) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product family marking) | — |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Qualification | — | Automotive |
| MSL-Level | — | 1 |
| Polarity | — | P-Channel |