BSR315PH6327XTSA1 vs BSR316PH6327XTSA1 对比

详细并排对比 BSR315PH6327XTSA1 出自 Infineon 和 BSR316PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 ✓ 量产中
Infineon
BSR316PH6327XTSA1 BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 ✓ 量产中

规格对比

参数 BSR315PH6327XTSA1 BSR316PH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSR316PH6327XTSA1
Series OptiMOS P-Channel OptiMOS
FET Type P-Channel, Enhancement Mode P-Channel Enhancement Mode
Drain-Source Voltage (VDS) -60 V -100 V
Continuous Drain Current (ID) -620 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) —
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
工作温度范围 -55 C to +150 C (TJ) -55 C to +150 C (junction)
封装 PG-SC59-3 / SOT-23-3 PG-SC59-3 (SC-59 / SOT-23 equivalent)
安装类型 Surface Mount Surface Mount
引脚数量 3 —
Packaging Tape & Reel (TR) —
RoHS 状态 Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Qualification — Automotive
MSL 等级 — 1
Polarity — P-Channel

数据手册与资源

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