BSR315PH6327XTSA1 vs BSR316PH6327XTSA1 비교

다음의 상세 나란히 비교: BSR315PH6327XTSA1 제조: Infineon 및 BSR316PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 ✓ 활성
Infineon
BSR316PH6327XTSA1 BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 ✓ 활성

사양 비교

파라미터 BSR315PH6327XTSA1 BSR316PH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.22 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSR316PH6327XTSA1
Series OptiMOS P-Channel OptiMOS
FET Type P-Channel, Enhancement Mode P-Channel Enhancement Mode
Drain-Source Voltage (VDS) -60 V -100 V
Continuous Drain Current (ID) -620 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) —
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
동작 온도 범위 -55 C to +150 C (TJ) -55 C to +150 C (junction)
패키지 PG-SC59-3 / SOT-23-3 PG-SC59-3 (SC-59 / SOT-23 equivalent)
실장 유형 Surface Mount Surface Mount
핀 수 3 —
Packaging Tape & Reel (TR) —
RoHS 상태 Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Qualification — Automotive
MSL 레벨 — 1
Polarity — P-Channel

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