BSS123IXTSA1 vs IRLML2060TRPBF Vergleich
Detaillierter Direktvergleich von BSS123IXTSA1 von Infineon und IRLML2060TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS123IXTSA1 | IRLML2060TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,13 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS Small-Signal | IR HEXFET (Trench Gate) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 190 mA | 1.2 A |
| Power Dissipation (PD) at TA=25C | 500 mW | 1.25 W |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 1.8 V typical |
| Gehäuse | PG-SOT-23-3 (SOT-23-3) | SOT-23 (Micro3, 3-pin) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (per family datasheet) | — |
| Qualification | Industrial | — |
| Configuration | Single N-Channel | — |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL1 |
| Gate Drive Logic Level | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) | — | 4.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 12 V |
| RDS(on) max at VGS=10V | — | 480 mOhm |
| RDS(on) max at VGS=4.5V | — | 650 mOhm (typical 580 mOhm) |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | — | 100 C/W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| RoHS-Status | — | Compliant |
| Halogenfrei | — | Yes |