BSS123IXTSA1 vs IRLML2060TRPBF Comparison

Detailed side-by-side comparison of BSS123IXTSA1 by Infineon and IRLML2060TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS123IXTSA1 IRLML2060TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology OptiMOS Small-Signal IR HEXFET (Trench Gate)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 190 mA 1.2 A
Power Dissipation (PD) at TA=25C 500 mW 1.25 W
RDS(on) (typical, VGS=10 V) 2.4 ohm —
RDS(on) (max per family datasheet) 6 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] 1.8 V typical
Package PG-SOT-23-3 (SOT-23-3) SOT-23 (Micro3, 3-pin)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (per family datasheet) —
Qualification Industrial —
Configuration Single N-Channel —
Lead-Free / RoHS Yes (per distributor listing) —
MSL Level [DATA_NEEDED: MSL rating] MSL1
Gate Drive Logic Level Logic-level compatible —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Pulsed Drain Current (IDM) — 4.8 A
Gate-to-Source Voltage (VGS) max — +/- 12 V
RDS(on) max at VGS=10V — 480 mOhm
RDS(on) max at VGS=4.5V — 650 mOhm (typical 580 mOhm)
Thermal Resistance Junction-to-Ambient (RthetaJA) — 100 C/W
Operating Junction Temperature — -55C to +150C
RoHS Status — Compliant
Halogen Free — Yes

Datasheets & Resources

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